李京波(物理学)

作者:来源:发布时间:2017-04-14

个人简介

李京波,男,1971年9月出生,湖南省道县人,现为
浙江师范大学LED芯片研发中心教授、博士生导师。


学习经历

1990.9-1994.7  湖南师范大学物理系获理学学士,物理专业;

1994.9-1997.2  华南理工大学应用物理系获理学硕士学位,凝聚态物理专业;

1998.9-2001.7  中国科学院半导体研究所获理学博士学位,凝聚态物理专业;


工作简历

2001.9-2004.9  美国伯克利劳伦斯国家实验室博士后。

2004.9-2007.7  美国再生能源国家实验室助理研究员。

2007.7         中国科学院半导体研究所研究员、博士生导师。

2010.9-至今    浙江师范大学LED芯片研发中心教授;


学术兼职

中国物理学会发光分会学术委员会委员;

中国科学院半导体研究所学术委员会委员、学位委员会委员;

清华大学兼职博士生导师;

华中科技大学兼职教授;

中国人民解放军--国防科技大学兼职教授;

浙江省金华市委市人民政府“决策咨询委员会”委员。


人才梯队、荣誉

2007年入选中国科学院“百人计划”;

2009年获国家杰出青年基金;

2012年中科院“百人计划”结题获评“优秀”;

2012年获浙江省“千人计划”荣誉称号;

2013年获浙江省“民营科技创新奖”;


研究领域及成果

李京波教授迄今在国际著名SCI刊物上发表130余篇论文,其中包括Nature、Nature Materials、Nature Comm.、 PRL、Nano Letters、JACS 和APL/PRB 上发表超过80篇论文。被国际同行引用超过3000次,最高单篇引用超过600次,单篇被引用超过100次的论文有9篇,获授权发明专利6项。李京波教授一直致力于半导体掺杂机制和纳米科学的实验与理论研究,其研究工作跨越了多个研究方向,包括:半导体物理学;纳米材料与光电子学;高性能光电功能材料与器件;二维强关联电子材料和缺陷等,并取得了一系列重要的研究成果。

代表性论文、论著

1.“Origin and enhancement of hole-induced ferromagnetism in first-row d0 semiconductors”, H. W. Peng, H. J. Xiang, S. H. Wei*, S. S. Li, J. B. Xia, and Jingbo Li*, Phys. Rev. Lett. 102, 017201 (2009).(通讯作者,被国际同行引用140余次)。

2.“Design of narrow-gap TiO2 for enhanced photoelectrochecmical activity: A passivated codoping approach”, Y. Q. Gai, Jingbo Li*, S. S. Li, J. B. Xia, and S. H. Wei*, Phys. Rev. Lett. 102, 036402 (2009).(通讯作者,被国际同行引用190余次)。

3.“Mutual Passivation of Donors and Isovalent Nitrogen in GaAs”, Jingbo Li, P. Carrier, S.-H. Wei, S.-S. Li and J.-B. Xia, Phys. Rev. Lett. 96, 035505 (2006).

4.“Stability of DX center in GaAs Quantum Dots”, Jingbo Li, S.-H. Wei, L.-W. Wang, Phys. Rev. Lett. 94, 185501 (2005).
5.“Design of shallow acceptors in ZnO: First-principles band-structure calculations”, Jingbo Li, S.-H. Wei, S.-S. Li and J.-B. Xia, Phys. Rev. B, Rapid Communication 74, R081201 (2006). (被国际同行引用130余次)。

6.“Band-structure-correlated local density approximation study of semiconductor quantum dots and wires”, Jingbo Li and L.-W. Wang, Phys. Rev. B, 72, 125325 (2005). (被国际同行引用120余次)。

7.“First principle study of core/shell quantum dots”, Jingbo Li and L.W. Wang, Appl. Phys. Lett. 84, 3648 (2004).(Highlight: Figure 2 is the cover story of APL 3 May 2004 issue).

8.“Electronic Structure of InP Quantum Rods: Differences between Wurzite, Zinc Blende, and Different Orientations”, Jingbo Li and L.W. Wang, Nano Letters, 4, 29 (2004).

9.“Shape Effects on Electronic States of Nanocrystals”, Jingbo Li, and L.W. Wang, Nano Letters, 3, 1357 (2003).(被国际同行引用120余次)。

10.“High Energy Excitations in CdSe Quantum Rods”, Jingbo Li, and L.W. Wang, Nano Letters, 3, 101 (2003).

代表性科研项目

1.2008-2012,中国科学院“百人计划”。

2.2009-2012,国家863计划新材料领域重点项目,首席科学家—“高效氮化物LED材料及芯片关键技术”。

3.2009-2013,国家杰出青年基金。

4.2013-2015,国家自然科学基金委重大研究计划培育项目--“宽带隙氧化物光电功能材料的基础研究”。

5.2012-2017,浙江省重点科技创新团队“新型固态光电器件与技术科技创新团队”(首席专家:吴锋民、李京波)。


近三年教学情况

为本科生主讲课程有《半导体物理学》,指导培养硕士研究生5名,培养(已经毕业)博士研究生22名。


Profile

Jingbo Li, Date of birth: September, 1971 (Hunan province, China)

Gender: Male; Research Center for Light Emitting Diodes
Zhejiang Normal University

Jinhua 321004, Zhejiang Province, CHINA


Education Background

09/1998 --02/2001  Ph.D in Condensed Matter Physics, Institute of Semiconductors Chinese Academy of Sciences, Beijing, China

09/1994 --02/1997  M.S. in Condensed Matter Physics, Department of Physics South China University of Technology, Guangzhou, China

09/1990--07/1994  B.S. in Physics, Department of Physics
Hunan Normal University, Changsha, China


Work Experiences

10/2007 --now: Full-professor, Zhejiang Normal University, China

10/2007 --  : Research Professor, Institute of Semiconductor, Chinese Academy of Science, China

10/2004 --09/2007: Research Associate, Computational Material Science Group National Renewable Energy Laboratory, Golden, CO 80401, USA

10/2001 -- 09/2004: Post-doctoral fellow, Computational Research Division, Lawrence Berkeley National Lab, Berkeley, CA 94720, USA


Other Academic Positions/Memberships

Journal review Referee for Phys. Rev. Letters / Phys. Rev. B, Nano Letters, ACS Nano, JPCC, Applied Physics Letters, Chemistry of Materials, JAP

·Membership member of APS, MRS, ACS, TMS.


Honorable Titles and Awards

Second Prize for Advancement in Science and echnology of Guangdong Province, China, 1998.

Award of “Hundred Talent Program”, Chinese Academy of Sciences, China, 2007.

Award of “Natural Science Foundation for Distinguished Young Scholar”, China, 2009.

Award of “Thousand Talents Program” of Zhejiang Province, China, 2012.

“Private Technology Innovation Award” of Zhejiang Province, China, 2013.


Academic Visits

2000, International Center for Theoretical Physics (ICTP), Trieste, Italy.

2001, Institute of Physics, Mainz University, Mainz, Germany.


Research Field and Achievements

Electronic structure and optical properties of semiconductor nanocrystals.

Semiconductor nano-devices.
Defect properties in semiconductor nanocrystals.

Novel properties and applications of strongly correlated electron materials with two-dimension materials

Ab-initio large-scale calculations of electronic Structures of quantum dots and wires.

Overcoming doping bottlenecks in semiconductors, for example, p-type doping in wide-band semiconductors.

Spintronic of semiconductor nanocrystals.


Representative Works

  1. H. W. Peng, H. J. Xiang, S. H. Wei*, S. S. Li, J. B. Xia, and Jingbo Li*, “Origin and enhancement of hole-induced ferromagnetism in first-row d0 semiconductors”, Phys. Rev. Lett. 102, 017201 (2009). (Citations are over 140 times)
  2. Y. Q. Gai, Jingbo Li*, S. S. Li, J. B. Xia, and S. H. Wei*, “Design of narrow-gap TiO2 for enhanced photoelectrochecmical activity: A passivated codoping approach”, Phys. Rev. Lett. 102, 036402 (2009). (Citations are over 190 times)
  3. “Mutual Passivation of Donors and Isovalent Nitrogen in GaAs”, Jingbo Li, P. Carrier, S.-H. Wei, S.-S. Li and J.-B. Xia, Phys. Rev. Lett. 96, 035505 (2006).
  4. “Stability of DX center in GaAs Quantum Dots”, Jingbo Li, S.-H. Wei, L.-W. Wang, Phys. Rev. Lett. 94, 185501 (2005).
  5. “Design of shallow acceptors in ZnO: First-principles band-structure calculations”, Jingbo Li, S.-H. Wei, S.-S. Li and J.-B. Xia, Phys. Rev. B, Rapid Communication 74, R081201 (2006). (Citations are over 130 times)
  6. “Band-structure-correlated local density approximation study of semiconductor quantum dots and wires”, Jingbo Li and L.-W. Wang, Phys. Rev. B, 72, 125325 (2005). (Citations are over 120 times)
  7. “First principle study of core/shell quantum dots”, Jingbo Li and L.W. Wang, Appl. Phys. Lett. 84, 3648 (2004).(Highlight: Figure 2 is the cover story of APL 3 May 2004 issue).
  8. “Electronic Structure of InP Quantum Rods: Differences between Wurzite, Zinc Blende, and Different Orientations”, Jingbo Li and L.W. Wang, Nano Letters, 4, 29 (2004).
  9. “Shape Effects on Electronic States of Nanocrystals”, Jingbo Li, and L.W. Wang, Nano Letters, 3, 1357 (2003). (Citations are over 120 times)
  10. “High Energy Excitations in CdSe Quantum Rods”, Jingbo Li, and L.W. Wang, Nano Letters, 3, 101 (2003).

 


Media Coverage

1.Berkeley Lab VIEW: TUNING THE NANOWORLD, Aug.6 2004, Vol.2, No.16.

http://www.lbl.gov/Science-Articles/Archive/MSD-tuning-the-nanoworld.html

2. NATURE highlights: Nanostructures: Improving the line, August 6 2004,Vol.2, No.16.

http://www.nature.com/nature/links/040708/040708-7.html

3. NEWSFACTOR TECHNOLOGY NEWS:  

Nanotech Branches out with New Discovery, July 16 2004,

http://www.newsfactor.com/story.xhtml?story_id=25880

4.HPC View: NANOSCRUCTURES: THEY’RE COOL, BUT HOW CAN WE USE THEM? August 27, 2004, Vol. 13, No.34

http://www.taborcommunications.com/hpcwire/hpcwireWWW/04/0827/108261.html

5.Nature Materials: News and views:

Nanoscale materials: A new season, May 15 2005, Vol. 4, 113-114 

http://www.nature.com/nmat/journal/v4/n2/full/nmat1316.html

6.Nature Asia Materials: featured highlight:

Green energy: Tailor made catalysts, March 17, 2009 

http://www.natureasia.com/asia-materials/highlight.php?id=408


Contacts

Tel: 86-579-82297896,

Fax: 86-579-82297119

E-mail: jbli@zjnu.cn